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Showing results 1 to 12 of 12

Artificial Synaptic Properties in Oxygen-Based ElectrochemicalRandom-Access Memory with CeO2 Nanoparticle Assembly as GateInsulator for Neuromorphic Computing File

Jeong, Boyoung , Noh, Taeyun , Han, Jimin , Ryu, Jiyeon , Park, Jae-Gwan , Kim, Younguk , Choi, Yonghoon , Lee, Sehyun , Park, Jongnam , Yoon, Tae-Sik

Article Issue Date2025-03 View78
Charge-Storage-Based vs. Non-Charge-Storage-Based 1T Non-Volatile Memory through the Interaction between Oxide Semiconductor Channel and Gate Oxide Layer

Han, Jimin , Jeong, Boyoung , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-08 View107
Charge-Trap Memory Characteristics with UV/Ozone-Treated HfO2-x Gate Oxide and Oxide Semiconductor Channel Layer

Noh, Taeyun , Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-09 View64
Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO2 Charge-Trap Layer for Charge-Trap Flash MemoryCl File

Noh, Taeyun , Han, Jimin , Jeong, Boyoung , Park, Jae-Gwan , Kim, Kihyeun , Lee, Minju , Kim, Bio , Choi, Hanmei , Yoon, Tae-Sik

Article Issue Date2025-02 View54
Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution File File

Jeong, Boyoung , Chung, Peter Hayoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2024-03 View105
Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO2-x Gate Insulator and a Zinc Oxide Channel Layer File

Han, Jimin , Noh, Taeyun , Jeong, Boyoung , Chung, Peter Hayoung , Park, Garam , Lee, Min-Hyun , Kim, Yumin , Yoon, Tae-Sik

Article Issue Date2025-06 View71
Non-Charge Storage Based Nonvolatile Memory with IGZO Oxide Semiconductor and LiCoOx Charge Trap & Ion Supplying Layer with Large Memory Window

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View73
Non-Volatile Charge-Trap Flash Memory Characteristics with the ZnO Channel Layer and Low-Temperature Atomic Layer Deposited HfO2-x Charge-Trap Layer

Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2024-11-27 View43
Non-Volatile Charge-Trap Memory Characteristics with Low-Temperature Atomic Layer Deposited HfO2−x Charge-Trap Layer and Enhanced Hole Trapping by Rapid Thermal Annealing

Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2024-12-12 View111
Retention 개선을 위한 원자층 증착 HfO2 나노결정 차지트랩 플래시 메모리 소자 연구

Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2025-06-19 View25
Smartphone-Based Water-Level Estimation Method Using Visual Localization and Ray Casting File File

Noh, Taeyun , Lee, Haeseong , Moon, Sungho , Chintya, Ni Putu Praja , Kim, Wonkook , Lee, Myungho

Article Issue Date2025-10 View0
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor File

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2023-05 View120
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