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Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric File

Jang, Tae-Young , Kim, Dong-Hyoub , Kim, Jungwoo , Chang, Jun Suk , Jeong, Jae Kyeong , Heo, Yoon-Uk , Kim, Young-Ki , Choi, Changhwan , Park, Hokyung , Choi, Rino

Article Issue Date2011-07 View157
Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization File

On, Nuri , Kim, Bo Kyoung , Kim, Yerin , Kim, Eun Hyun , Lim, Jun Hyung , Hosono, Hideo , Kim, Junghwan , Yang, Hoichang , Jeong, Jae Kyeong

Article Issue Date2020-11 View205
High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 degrees C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film File

Choi, Cheol Hee , Kim, Taikyu , Ueda, Shigenori , Shiah, Yu-Shien , Hosono, Hideo , Kim, Junghwan , Jeong, Jae Kyeong

Article Issue Date2021-06 View120
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