or enter first few letters:
Search
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:
Update

Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)TypeView
2007-01A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operationKang, Sangbeom; Cho, Woo Yeong; Cho, Beak-Hyung; Lee, Kwang-Jin; Lee, Chang-Soo; Oh, Hyung-Rok; Choi, Byung-Gil; Wang, Qi; Kim, Hye-Jin; Park, Mu-Hui; Ro, Yn Hwan; Kim, Suyeon; Ha, Choong-Duk; Kim, Ki-Sung; Kim, Young-Ran; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Jeong, Gitae; Jeong, Hongsik; Kim, Kinam; Shin, YunSuengARTICLE89
2005-01A 0.18-mu m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)Cho, Woo Yeong; Cho, Beak-Hyung; Choi, Byung-Gil; Oh, Hyung-Rok; Kang, Sangbeom; Kim, Ki-Sung; Kim, Kyung-Hee; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Hwang, Youngnam; Ahn, S.; Koh, Gwan-Hyeob; Jeong, Gitae; Jeong, Hongsik; Kim, KinamARTICLE99
2002-10Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design RuleLee, Jaegoo; Lee, Juyong; Lee, Jaekyu; Kwak, Donghwa; Jeong, Gitae; Chung, Taeyoung; Cho, Changhyun; Kim, Minsang; Shin, Sooho; Koh, Kwanhyeob; Jeong, Hongsik; Kim, KinamARTICLE79
Showing results 1 to 3 of 3

MENU