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Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact File

Jeon, CM , Jang, HW , Choi, Kyoung Jin , Bae, SB , Lee, JH , Lee, JL

Article Issue Date2002-05 View147
Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma File

Jeon, CM , Jang, HW , Choi, Kyoung Jin , Bae, SB , Lee, JH , Lee, JL

Article Issue Date2002-07 View195
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