| 2013-06 | Growth characteristics and electrical properties of diameter-selective InAs nanowires | Shin, Jae Cheol; Lee, Ari; Kim, Hyo Jin; Kim, Jae Hun; Choi, Kyoung Jin; Kim, Young Hun; Kim, Nam; Bae, Myung-Ho; Kim, Ju-Jin; Kim, Bum-Kyu | ARTICLE | 805 |
| 2014-04 | Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications | Bae, Myung-Ho; Kim, Bum-Kyu; Ha, Dong-Han; Lee, Sang Jun; Sharma, Rahul; Choi, Kyoung Jin; Kim, Ju-Jin; Choi, Won Jun; Shin, Jae Cheol | ARTICLE | 881 |
| 2017-04-21 | Pseudo-Wrap-Gate InAs Nanowire Field Effect Transistor with Pre-Deposited Gate Insulator | Jin, Hanbyul; Mo, Kyu Hyung; Hwang, Jeongwoo; Shin, Jae Cheol; Yu, Byeong-Sung; Kim, Ju-Jin; Bae, Myung-Ho; Kim, Nam; Park, Kibog | CONFERENCE | 123 |
| 2015-07-14 | Quantum dot defined by local top-gates along InAs/AlOx core-shell nanowire | Yu, Byeong-Sung; Shin, Jae Cheol; Jin, Han Byul; Park, Kibog; Bae, Myung-Ho; Kim, Ju-Jin; Kim, Nam | CONFERENCE | 120 |
| 2015-06 | Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays | Shin, Hyun Wook; Lee, Sang Jun; Kim, Doo Gun; Bae, Myung-Ho; Heo, Jaeyeong; Choi, Kyoung Jin; Choi, Won Jun; Choe, Jeong-woo; Shin, Jae Cheol | ARTICLE | 1026 |
