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Effect of ethanolamine passivation of ZnO nanoparticles in quantum dot light emitting diode structure File

Noh, Kyeongchan , Kim, Minsu , Lee, Sang-Hyun , Yun, Hwang-Sik , Lim, Tae-Hyeon , Choi, Yeongho , Kim, Ki-Ju , Jiang, Yiran , Beom, Keonwon , Kim, Minju , et al

Article Issue Date2019-09 View5

Effect of Nitrogen Doping on Synaptic Characteristics of Indium-gallium-zinc Oxide Thin-film Transistor

Beom, Keonwon , Kim, Minju , Lee, Hyerin , Yoon, Tae-Sik

Conference Paper Issue Date2020-02-13 View11

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor File

Beom, Keonwon , Kim, Minju , Lee, Hyerin , Kim, Hyung Jun , Cho, Seong-Yong , Lee, Hyun Ho , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2020-04 View6

Facile synthesis of ZnO microrod photodetectors by solid-state reaction File

Lee, HanJin , Jung, Hyun Kyu , Kim, Young Eun , Beom, Keonwon , Mun, Jeong Heum , Hong, A-Ra , Jang, Ho Seong , Park, Jong-Sung , Yoon, Tae-Sik , Kim, Dong Hun

Article Issue Date2020-06 View10

Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application

Kim, Minju , Park, Daehoon , Beom, Keonwon , Yang, Paul , Kim, Sunki , Kim, Hyung Jun , Yoon, Tae-Sik

Conference Paper Issue Date2019-04-23 View13

Nonvolatile Memory and Artificial Synaptic Characteristics in Thin-Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer File

Lee, Hyerin , Beom, Keonwon , Kim, Minju , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2020-09 View7

Nonvolatile reversible capacitance changes through filament formation in a floating-gate metal-oxide-semiconductor capacitor with Ag/CeOx/Pt/HfOx/n-Si structure File

Kim, Minju , Beom, Keonwon , Lee, Hyerin , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2019-08 View8

Post-annealing temperature-dependent electrical properties of thin-film transistors with a ZnO channel and HfOx gate insulator deposited by atomic layer deposition File

Lee, Hyerin , Beom, Keonwon , Kim, Minju , Yoon, Tae-Sik

Article Issue Date2020-07 View7

Process-dependent Synaptic and Nonvolatile Memory Characteristics in Thin-film Transistors with HfOx Gate Insulator and ZnO Channel Layer

Lee, Hyerin , Beom, Keonwon , Kim, Minju , Yoon, Tae-Sik

Conference Paper Issue Date2020-02-13 View10

Reversible capacitance changes in the MOS capacitor with an ITO/CeO2/p-Si structure File

Park, Daehoon , Kim, Minju , Beom, Keonwon , Cho, Seong-Yong , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2019-05 View8

Single- and double-gate synaptic transistor with TaOx gate insulator and IGZO channel layer File

Beom, Keonwon , Yang, Paul , Park, Daehoon , Kim, Hyung Jun , Lee, Hyun Ho , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2019-01 View4

Single-and Double-Gate Synaptic Transistor with a TaOx Gate Insulator and an IGZO Semiconductor Channel Layer

Beom, Keonwon , Yang, Paul , Park, Daehoon , Kim, Minju , Kim, Sunki , Kim, Hyung Jun , Kang, Chi Jung , Yoon, Tae-Sik

Conference Paper Issue Date2019-04-23 View10

Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack File

Yang, Paul , Park, Daehoon , Beom, Keonwon , Kim, Hyung Jun , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2018-07 View3

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure File

Kim, Hyung Jun , Park, Daehoon , Yang, Paul , Beom, Keonwon , Kim, Min Ju , Shin, Chansun , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2018-06 View6

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application File

Beom, Keonwon , Han, Jimin , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2021-07 View19

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