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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application

Author(s)
Kim, MinjuPark, DaehoonBeom, KeonwonYang, PaulKim, SunkiKim, Hyung JunYoon, Tae-Sik
Issued Date
2019-04-23
URI
https://scholarworks.unist.ac.kr/handle/201301/79964
Citation
2019 MRS Spring Meeting & Exhibit
Publisher
Materials Research Society

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