Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance

Abstract

The fabricated quantum-tunneling devices have a structure totally compatible with silicon-on-insulator CMOS device except for degenerate channel doping and the intentional omission of lightly doped drain (LDD) region. The key principle of the device operation is the field-induced interband tunneling effect, and thus the name of this quantum-tunneling device: FITET. In the transfer I-Vcharacteristics of FITET, negative-differential transconductance (NDT) characteristics have been observed at room temperature. By controlling the critical device parameters to enhance field-effect such as gate oxide thickness, the peak-to-valley current ratio over 5 has been obtained at room temperature, and the negative-differential conductance (NDC) characteristics as well as NDT have been observed in the output I-V curves of the same FITET.