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DC Field | Value | Language |
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dc.citation.endPage | 321 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 317 | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 4 | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Kim, HH | - |
dc.contributor.author | Song, KW | - |
dc.contributor.author | Huh, JI | - |
dc.contributor.author | Lee, JD | - |
dc.contributor.author | Park, BG | - |
dc.date.accessioned | 2023-12-22T10:36:45Z | - |
dc.date.available | 2023-12-22T10:36:45Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2005-05 | - |
dc.description.abstract | The fabricated quantum-tunneling devices have a structure totally compatible with silicon-on-insulator CMOS device except for degenerate channel doping and the intentional omission of lightly doped drain (LDD) region. The key principle of the device operation is the field-induced interband tunneling effect, and thus the name of this quantum-tunneling device: FITET. In the transfer I-Vcharacteristics of FITET, negative-differential transconductance (NDT) characteristics have been observed at room temperature. By controlling the critical device parameters to enhance field-effect such as gate oxide thickness, the peak-to-valley current ratio over 5 has been obtained at room temperature, and the negative-differential conductance (NDC) characteristics as well as NDT have been observed in the output I-V curves of the same FITET. | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.4, no.3, pp.317 - 321 | - |
dc.identifier.doi | 10.1109/TNANO.2005.847008 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.scopusid | 2-s2.0-20344389518 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7906 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=20344389518 | - |
dc.identifier.wosid | 000229056800004 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | degenerate | - |
dc.subject.keywordAuthor | field-induced interband tunneling effect (FITET) | - |
dc.subject.keywordAuthor | interband | - |
dc.subject.keywordAuthor | negative-differential conductance (NDC) | - |
dc.subject.keywordAuthor | negative-differential transconductance (NDT) | - |
dc.subject.keywordAuthor | quantum-tunneling | - |
dc.subject.keywordAuthor | silicon-on-insulator (SOI) | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE OPERATION | - |
dc.subject.keywordPlus | DEVICE | - |
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