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Kim, Kwang S.
Center for Superfunctional Materials (CSM)
Research Interests
  • Theoretical/experimental nanosciences, molecular electronics spectroscopy, energy materials

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Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

Cited 5 times inthomson ciCited 1 times inthomson ci
Title
Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
Author
Hong, Young JoonYang, Jae WonLee, Wi HyoungRuoff, Rodney S.Kim, Kwang S.Fukui, Takashi
Keywords
double heterostructures; graphene; indium arsenide; metal-organic vapor-phase epitaxy; van der Waals epitaxy
Issue Date
201312
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.25, no.47, pp.6847 - 6853
Abstract
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
URI
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DOI
http://dx.doi.org/10.1002/adma.201302312
ISSN
0935-9648
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