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- Ruoff, Rodney S.
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Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
- Author(s)
- Hong, Young Joon, Yang, Jae Won, Lee, Wi Hyoung, Ruoff, Rodney S., Kim, Kwang S., Fukui, Takashi
- Issued Date
- 2013-12
- Citation
- ADVANCED MATERIALS, v.25, no.47, pp.6847 - 6853
- Abstract
- Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
- Publisher
- WILEY-V C H VERLAG GMBH
- ISSN
- 0935-9648
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