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Ruoff, Rodney S.
Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Next generation carbons, ultrathin sp3-bonded carbon sheets, negative curvature (‘Schwartzites’) carbons, sp3/sp2 hybrid carbon materials, model compounds for novel carbon materials, reaction mechanisms

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Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

Cited 5 times inthomson ciCited 1 times inthomson ci
Title
Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
Author
Hong, Young JoonYang, Jae WonLee, Wi HyoungRuoff, Rodney S.Kim, Kwang S.Fukui, Takashi
Issue Date
2013-12
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.25, no.47, pp.6847 - 6853
Abstract
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
URI
https://scholarworks.unist.ac.kr/handle/201301/5557
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84890439517
DOI
10.1002/adma.201302312
ISSN
0935-9648
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CHM_Journal Papers
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