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- Ruoff, Rodney S.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 6853 | - |
| dc.citation.number | 47 | - |
| dc.citation.startPage | 6847 | - |
| dc.citation.title | ADVANCED MATERIALS | - |
| dc.citation.volume | 25 | - |
| dc.contributor.author | Hong, Young Joon | - |
| dc.contributor.author | Yang, Jae Won | - |
| dc.contributor.author | Lee, Wi Hyoung | - |
| dc.contributor.author | Ruoff, Rodney S. | - |
| dc.contributor.author | Kim, Kwang S. | - |
| dc.contributor.author | Fukui, Takashi | - |
| dc.date.accessioned | 2023-12-22T03:10:53Z | - |
| dc.date.available | 2023-12-22T03:10:53Z | - |
| dc.date.created | 2014-09-01 | - |
| dc.date.issued | 2013-12 | - |
| dc.description.abstract | Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion. | - |
| dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.25, no.47, pp.6847 - 6853 | - |
| dc.identifier.doi | 10.1002/adma.201302312 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.scopusid | 2-s2.0-84890439517 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/5557 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84890439517 | - |
| dc.identifier.wosid | 000328424600006 | - |
| dc.language | 영어 | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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