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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics

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Title
Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics
Author
Shin, SunhaeKang, In ManKim, Kyung Rok
Keywords
Band-to-band tunneling; Multiple switching; Negative differential resistance; Peak-to-valley current ratio
Issue Date
201312
Publisher
IEEK PUBLICATION CENTER
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.546 - 550
Abstract
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.
URI
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DOI
http://dx.doi.org/10.5573/JSTS.2013.13.6.546
ISSN
1598-1657
Appears in Collections:
ECE_Journal Papers

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