File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics
- Author(s)
- Shin, Sunhae, Kang, In Man, Kim, Kyung Rok
- Issued Date
- 2013-12
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.546 - 550
- Abstract
- We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current.
- Publisher
- IEEK PUBLICATION CENTER
- ISSN
- 1598-1657
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.