File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김경록

Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.endPage 550 -
dc.citation.number 6 -
dc.citation.startPage 546 -
dc.citation.title JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE -
dc.citation.volume 13 -
dc.contributor.author Shin, Sunhae -
dc.contributor.author Kang, In Man -
dc.contributor.author Kim, Kyung Rok -
dc.date.accessioned 2023-12-22T03:11:22Z -
dc.date.available 2023-12-22T03:11:22Z -
dc.date.created 2014-01-06 -
dc.date.issued 2013-12 -
dc.description.abstract We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 104 at low operation voltage of 0.5 V in a single peak and valley current. -
dc.identifier.bibliographicCitation JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.546 - 550 -
dc.identifier.doi 10.5573/JSTS.2013.13.6.546 -
dc.identifier.issn 1598-1657 -
dc.identifier.scopusid 2-s2.0-84890882372 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3874 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84890882372 -
dc.identifier.wosid 000328936000002 -
dc.language 영어 -
dc.publisher IEEK PUBLICATION CENTER -
dc.title Negative differential resistance devices with ultra-high peak-to-valley current ratio and its multiple switching characteristics -
dc.type Article -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Physics, Applied -
dc.relation.journalResearchArea Engineering; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.