BROWSE

Related Researcher

Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

ITEM VIEW & DOWNLOAD

Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics

Cited 0 times inthomson ciCited 2 times inthomson ci
Title
Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics
Author
Shin, SunhaeKang, In ManKim, Kyung Rok
Keywords
100 GHz; 3D device simulation; Circuit simulators; Device simulations; Extraction method; Gate input; Junctionless; Parameter-extraction method; Quasi-static; Radio frequencies; Radio frequency characteristics; RF performance; Silicon nanowire field-effect transistors; Silicon nanowires; Simulation program with integrated circuit emphasis; Substrate resistance; Transport time; Y-parameters
Issue Date
201206
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.1 - 7
Abstract
In this paper, we propose a radio-frequency (RF) model and parameter extraction method for vertical junctionless silicon nanowire (VJL SNW) field-effect transistors (FETs) using three-dimensional (3D) device simulation. We introduce the substrate-related components such as the substrate resistance (R-sub) and drain-to-substrate capacitance (C-sub), and evaluate the RF performance such as f(t), f(max), gate input capacitance, and transport time delay. A quasi-static (QS) RF model has been used in simulation program with integrated circuit emphasis (SPICE) circuit simulator to simulate VJL SNW FETs with RF parameters extracted from 3D device simulated Y-parameters. We confirmed the validity of our RF model by the well-matched results between HSPICE and 3D device simulation in terms of the Y-parameters and the S-22-parameter up to 100 GHz.
URI
Go to Link
DOI
http://dx.doi.org/10.1143/JJAP.51.06FE20
ISSN
0021-4922
Appears in Collections:
ECE_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU