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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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COMPACT MODELING OF SILICON NANOWIRE MOSFET FOR RADIO FREQUENCY APPLICATIONS

Cited 1 times inthomson ciCited 2 times inthomson ci
Title
COMPACT MODELING OF SILICON NANOWIRE MOSFET FOR RADIO FREQUENCY APPLICATIONS
Author
Cho, SeongjaeKim, Kyung RokPark, Byung-GookKang, In Man
Keywords
3D device simulation; Analytical parameter extraction; Channel length; Channel radius; Compact modeling; Device simulators; Modeling errors; MOS-FET; New model; Parameter analysis; Radio frequencies; radio frequency; Radio frequency applications; silicon nanowire; Silicon Nanowires; Small-signal modeling; Three-dimensional (3D); Y-parameters
Issue Date
201102
Publisher
JOHN WILEY & SONS INC
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.53, no.2, pp.471 - 473
Abstract
This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to he only 1.4%.
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DOI
http://dx.doi.org/10.1002/mop.25686
ISSN
0895-2477
Appears in Collections:
ECE_Journal Papers

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