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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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COMPACT MODELING OF SILICON NANOWIRE MOSFET FOR RADIO FREQUENCY APPLICATIONS
- Author(s)
- Cho, Seongjae, Kim, Kyung Rok, Park, Byung-Gook, Kang, In Man
- Issued Date
- 2011-02
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.53, no.2, pp.471 - 473
- Abstract
- This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to he only 1.4%.
- Publisher
- JOHN WILEY & SONS INC
- ISSN
- 0895-2477
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