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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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dc.citation.endPage 473 -
dc.citation.number 2 -
dc.citation.startPage 471 -
dc.citation.title MICROWAVE AND OPTICAL TECHNOLOGY LETTERS -
dc.citation.volume 53 -
dc.contributor.author Cho, Seongjae -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Park, Byung-Gook -
dc.contributor.author Kang, In Man -
dc.date.accessioned 2023-12-22T06:36:41Z -
dc.date.available 2023-12-22T06:36:41Z -
dc.date.created 2013-06-10 -
dc.date.issued 2011-02 -
dc.description.abstract This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to he only 1.4%. -
dc.identifier.bibliographicCitation MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.53, no.2, pp.471 - 473 -
dc.identifier.doi 10.1002/mop.25686 -
dc.identifier.issn 0895-2477 -
dc.identifier.scopusid 2-s2.0-78650410498 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3029 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=78650410498 -
dc.identifier.wosid 000286125500065 -
dc.language 영어 -
dc.publisher JOHN WILEY & SONS INC -
dc.title COMPACT MODELING OF SILICON NANOWIRE MOSFET FOR RADIO FREQUENCY APPLICATIONS -
dc.type Article -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Optics -
dc.relation.journalResearchArea Engineering; Optics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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