GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors
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- GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors
- Jung, Younghun; Kim, Sung Hyun; Kim, Jihyun; Wang, Xiaotie; Ren, Fan; Choi, Kyoung Jin; Pearton, Stephen J.
- GaN film; GaN-based light-emitting diodes; Growth surfaces; KOH solution; Laser lift-off; Laser lift-off techniques; LED structure; Light-extraction efficiency; Nano-sized; Patterned sapphire substrate; Reflective layers
- Issue Date
- A V S AMER INST PHYSICS
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.5, pp. -
- GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing hemispheres on the growth surface. Free-standing LED structures were obtained by removing the PSS using laser lift-off technique. The N-face GaN surface with micron-sized concave hemisphere structures, which had been located between the sapphire and the GaN film, was then exposed and photo-electrochemically etched using a 2M KOH solution to create nano-sized pyramids. Aluminum was deposited on the roughened N-face GaN as a reflective layer. The roughened aluminum reflectors, consisting of micron-sized hemisphere structures and nano-sized pyramids, enhanced the light extraction efficiency through multiple scattering events of photons and randomized the directions of the photons. The subsequent enhancement in electroluminescence was 13% compared with an untextured control LED.
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