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DC Field | Value | Language |
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dc.citation.number | 5 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 30 | - |
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Kim, Sung Hyun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Wang, Xiaotie | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.date.accessioned | 2023-12-22T04:44:27Z | - |
dc.date.available | 2023-12-22T04:44:27Z | - |
dc.date.created | 2013-06-19 | - |
dc.date.issued | 2012-09 | - |
dc.description.abstract | GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing hemispheres on the growth surface. Free-standing LED structures were obtained by removing the PSS using laser lift-off technique. The N-face GaN surface with micron-sized concave hemisphere structures, which had been located between the sapphire and the GaN film, was then exposed and photo-electrochemically etched using a 2M KOH solution to create nano-sized pyramids. Aluminum was deposited on the roughened N-face GaN as a reflective layer. The roughened aluminum reflectors, consisting of micron-sized hemisphere structures and nano-sized pyramids, enhanced the light extraction efficiency through multiple scattering events of photons and randomized the directions of the photons. The subsequent enhancement in electroluminescence was 13% compared with an untextured control LED. | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.5 | - |
dc.identifier.doi | 10.1116/1.4739769 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.scopusid | 2-s2.0-84865480866 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2718 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84865480866 | - |
dc.identifier.wosid | 000308404900005 | - |
dc.language | 영어 | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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