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오윤석

Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
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Structural and electrical properties of SrRuO3 thin films for buffer layers of coated conductors

Author(s)
Choi, MRJo, WOh, Yoon SeokKim, KHKang, YMYoo, SIMoon, SHHa, HSOh, SS
Issued Date
2007-10
DOI
10.1016/j.physc.2007.05.024
URI
https://scholarworks.unist.ac.kr/handle/201301/12075
Fulltext
http://www.sciencedirect.com/science/article/pii/S0921453407008726
Citation
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, v.463, pp.584 - 588
Abstract
SrRuO3 thin films have been grown in situ on single crystal LaAlO3 substrates and textured metal templates which contain an MgO layer produced by an ion-beam growth method. Deposition was made of oxygen partial pressure in a range from 50 m Torr to 250 m Torr with laser repetition rate of 5 Hz. Substrate temperature was between 600 °C and 800 °C. Dependence of out-of-plane and in-plane orientation of SrRuO3 thin films on pressure and growth temperature was investigated by X-ray diffraction. The surface morphology and grain growth behaviors of SrRuO3 thin films were analyzed by atomic force microscopy and scanning electron microscopy. In addition, the transverse magnetoresistance value in a field of 4 and 8 T was measured in temperature range of 50-200 K and the ferromagnetic transition at ∼140 K of SrRuO3 films on LaAlO3 was detected by resistivity measurement. © 2007 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
ISSN
0921-4534

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