This letter proposes a new indirect contact probing method to characterize vertical interconnections without contact damage. At the first step of the proposed technique, multiple one-port calibration measurements should be performed to characterize the contactor layer between the probe pads and the device-under-tests (DUTs). The characteristics of the actual vias as the DUTs are then extracted from indirect-contact measurements by de-embedding the contactor layer. In simulations and experiments at frequencies range from 2.5 to 18 GHz, we have verified via defects can be successfully identified from the indirect-contact measurements.