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dc.citation.conferencePlace JA -
dc.citation.title IEEE Symposium on VLSI Technology -
dc.contributor.author Park, Juhyuk -
dc.contributor.author Kim, Hokwon -
dc.contributor.author Kim, Yongil -
dc.contributor.author Baek, Woojin -
dc.contributor.author Lee, Shin Hyung -
dc.contributor.author Kim, Hyunsu -
dc.contributor.author Geum, Daemyeong -
dc.contributor.author Kim, Joon Pyo -
dc.contributor.author Jeong, Jaeyong -
dc.contributor.author Kim, Sanghyeon -
dc.date.accessioned 2026-03-27T14:02:40Z -
dc.date.available 2026-03-27T14:02:40Z -
dc.date.created 2026-03-26 -
dc.date.issued 2025-06-08 -
dc.description.abstract The monolithic 3D (M3D) integration of Si CMOS integrated circuits (IC) and μLEDs is essential for high-resolution AR/VR displays. In this work, we successfully demonstrated a red μLEDoS display of 1700 PPI and a 640×480 resolution based on the M3D process. The phosphide red μLED devices exhibited excellent color performance as unit pixels. Notably, with high pixel yield achieved through a low-temperature process below 300° C and a metal mesh structure mitigating IR drop issues, we successfully implemented high-quality imaging driven by real-time HDMI inputs using 8-bit grayscale. This study plays an essential role in advancing M3D μLEDoS next-generation display. -
dc.identifier.bibliographicCitation IEEE Symposium on VLSI Technology -
dc.identifier.doi 10.23919/VLSITechnologyandCir65189.2025.11075034 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/91116 -
dc.identifier.url https://ieeexplore.ieee.org/abstract/document/11075034 -
dc.language 영어 -
dc.publisher IEEE -
dc.title High-Performance Monolithic 3D Integrated Red μLEDoS Display for AR/VR -
dc.type Conference Paper -
dc.date.conferenceDate 2025-06-08 -

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