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Park, Heechun
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dc.citation.conferencePlace US -
dc.citation.title IEEE International Electron Devices Meeting -
dc.contributor.author Shin, Yehyun -
dc.contributor.author Kim, Ikkyum -
dc.contributor.author Park, Minho -
dc.contributor.author Yoon, Junghyun -
dc.contributor.author Baek, Seunghun -
dc.contributor.author Eum, Seongmin -
dc.contributor.author Yang, Heesoo -
dc.contributor.author Choi, Yurim -
dc.contributor.author Jeong, Jaeyong -
dc.contributor.author Kim, Sanghyeon -
dc.contributor.author Jung, Haksoon -
dc.contributor.author Kim, Seongju -
dc.contributor.author Park, Heechun -
dc.contributor.author Kwon, Jimin -
dc.date.accessioned 2026-03-27T14:02:39Z -
dc.date.available 2026-03-27T14:02:39Z -
dc.date.created 2026-03-26 -
dc.date.issued 2025-12-06 -
dc.description.abstract This study presents a benchmark framework for digital blocks featuring an active backside clock distribution network (BSCDN), which incorporates clock buffers and sinks implemented using backside-compatible logic based on carbon nanotube field-effect transistors (CNFETs). The proposed framework includes the fabrication, characterization and TCAD modeling of complementary CNFETs, neural network-based compact modeling, standard cell characterization, and a block-level benchmark comparing the performance of the active BSCDN with that of reported passive CDNs. -
dc.identifier.bibliographicCitation IEEE International Electron Devices Meeting -
dc.identifier.doi 10.1109/IEDM50572.2025.11353496 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/91115 -
dc.identifier.url https://ieeexplore.ieee.org/abstract/document/11353496/authors#authors -
dc.language 영어 -
dc.publisher IEEE -
dc.title Active BSCDN Benchmark Framework with Backside-Compatible CNFET Logic Technology -
dc.type Conference Paper -
dc.date.conferenceDate 2025-12-06 -

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