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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film

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Title
Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film
Author
Jeong, Hu YoungKim, Jong YunYoon, Tae HyunChoi, Sung-Yool
Keywords
EDS; PEDOT:PSS; Resistive switching; TEM
Issue Date
2010-01
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49
Abstract
We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process.
URI
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DOI
10.1016/j.cap.2009.12.011
ISSN
1567-1739
Appears in Collections:
SE_Journal Papers
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