Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
Cited 11 times inCited 12 times in
- Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
- Lee, Jung-Kyu; Jeong, Hu Young; Cho, In-Tak; Lee, Jeong Yong; Choi, Sung-Yool; Kwon, Hyuck-In; Lee, Jong-Ho
- Bipolar switching; Low-frequency noise (LFN); Random telegraph noise (RTN); Resistance random access memories (RRAMs)
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE ELECTRON DEVICE LETTERS, v.31, no.6, pp.603 - 605
- We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise Si/I2 in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S i/I2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices.
- ; Go to Link
- Appears in Collections:
- SE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.