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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices

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Title
Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
Author
Lee, Jung-KyuJeong, Hu YoungCho, In-TakLee, Jeong YongChoi, Sung-YoolKwon, Hyuck-InLee, Jong-Ho
Keywords
Bipolar switching; Low-frequency noise (LFN); Random telegraph noise (RTN); Resistance random access memories (RRAMs)
Issue Date
2010-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.31, no.6, pp.603 - 605
Abstract
We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise Si/I2 in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S i/I2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices.
URI
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DOI
10.1109/LED.2010.2046010
ISSN
0741-3106
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SE_Journal Papers
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