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정후영

Jeong, Hu Young
UCRF Electron Microscopy group
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Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

Author(s)
Jeong, Hu YoungKim, Jong YunKim, Jeong WonHwang, Jin OkKim, Ji-EunLee, Jeong YongYoon, Tae HyunCho, Byung JinKim, Sang OukRuoff, Rodney S.Choi, Sung-Yool
Issued Date
2010-11
DOI
10.1021/nl101902k
URI
https://scholarworks.unist.ac.kr/handle/201301/9085
Fulltext
https://pubs.acs.org/doi/10.1021/nl101902k
Citation
NANO LETTERS, v.10, no.11, pp.4381 - 4386
Abstract
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as nextgeneration nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984

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