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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

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Title
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Author
Jeong, Hu YoungKim, Jong YunKim, Jeong WonHwang, Jin OkKim, Ji-EunLee, Jeong YongYoon, Tae HyunCho, Byung JinKim, Sang OukRuoff, Rodney S.Choi, Sung-Yool
Keywords
flexible memory; Graphene oxide; nonvolatile memory; resistive switching; TEM; XPS
Issue Date
2010-11
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.10, no.11, pp.4381 - 4386
Abstract
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as nextgeneration nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.
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DOI
10.1021/nl101902k
ISSN
1530-6984
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UCRF_Journal Papers
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