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Jeong, Hu Young
UCRF Electron Microscopy group
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Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device

Author(s)
Kim, Jong YunJeong, Hu YoungKim, Jeong WonYoon, Tae HyunChoi, Sung-Yool
Issued Date
2011-03
DOI
10.1016/j.cap.2010.12.038
URI
https://scholarworks.unist.ac.kr/handle/201301/9082
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79960921411
Citation
CURRENT APPLIED PHYSICS, v.11, no.2, pp.E35 - E39
Abstract
The role of top interface layer in bipolar resistive switching (BRS) behaviors of Al/PEDOT:PSS/Al memory devices was investigated via comparison with the Au/PEDOT:PSS/Al system. The I-V characteristic curves of device with a PEDOT:PSS layer sandwiched between two Al electrodes displayed bipolar resistive switching characteristics, while the device with Au top electrode showed a permanent breakdown in forming process. HRTEM and in-situ XPS observation demonstrated that the Al top electrode reacted with oxygen and sulfur of PSS chain and produced Al-O-S layers, whereas Au top electrode did not reacted to form these types of interfacial layers. These results have confirmed the critical role of Al top electrode with the strong reactivity with a PEDOT:PSS organic layer in the bipolar resistive switching behaviors, which seems to closely related with the presence of electron trap sites at the interface between the top electrode and organic active layer.
Publisher
ELSEVIER SCIENCE BV
ISSN
1567-1739

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