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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

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Title
Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory
Author
Jeong, Hu YoungKim, Sung KyuLee, Jeong YongChoi, Sung-Yool
Keywords
NANOFILAMENTS; CURRENTS; BIPOLAR
Issue Date
2011-03
Publisher
SPRINGER
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.967 - 972
Abstract
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density.
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DOI
10.1007/s00339-011-6278-3
ISSN
0947-8396
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SE_Journal Papers
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