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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films

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Title
Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
Author
Jeong, Hu YoungLee, Jeong YongChoi, Sung-Yool
Keywords
Amorphous TiO; Amorphous titanium oxide; Conducting paths; Direct observation; Failure mechanism; Film deposition temperature; High temperature samples; Interface layer; Local clustering; Low temperatures; Non-homogeneous; Resistive switching; TiO
Issue Date
2010-07
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.97, no.4, pp. -
Abstract
To clarify the resistive switching and failure mechanisms in Al/amorphous TiO2 /Al devices we investigate the microscopic change in amorphous titanium oxide films and interface layers after the set process according to film deposition temperatures. For low temperature (<150 °C) samples, the thickness of top interface layer decreased after the set process due to the dissociation of a top interface layer by uniform migration of oxygen vacancies. Meanwhile, for high temperature samples, crystalline TiO phases emerged in the failed state, meaning the formation of conducting paths from the local clustering of oxygen vacancies in nonhomogeneous titanium oxide film.
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DOI
10.1063/1.3467854
ISSN
0003-6951
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UCRF_Journal Papers
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