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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Performance Enhancement of THz Detector Based on Trantenna with Shallow Trench Isolation in 28-nm CMOS Technology
- Author(s)
- Bin Song, Yoo, Ryu, Min Woo, Jang, E-San, Kim, Kyung Rok
- Issued Date
- 2025-10
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.25, no.5, pp.496 - 501
- Abstract
- We report a high-performance plasmonic terahertz (THz) detector based on a monolithic transistor-antenna (Trantenna) structure by using the 28-nm CMOS foundry technology. By designing an ultimate asymmetric field-effect transistor (FET) on a confined channel structure with shallow trench isolation (STI) technology, enhanced channel charge asymmetry between the source and drain has been obtained compared to the non-confined channel structure with limitations of asymmetric boundary condition intensification. In addition, we experimentally demonstrate a 2.25-fold performance enhancement over the non-confined channel plasmonic THz detector at 0.1 THz.
- Publisher
- IEEK PUBLICATION CENTER
- ISSN
- 1598-1657
- Keyword (Author)
- asymmetric FET, plasmonic terahertz (THz) detector, responsivity, monolithic trantenna, CMOS
- Keyword
- TERAHERTZ RADIATION, ANTENNA
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