BROWSE

Related Researcher

Author's Photo

Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

ITEM VIEW & DOWNLOAD

Fabrication of n-type carbon nanotube field-effect transistors by Al doping

Cited 15 times inthomson ciCited 15 times inthomson ci
Title
Fabrication of n-type carbon nanotube field-effect transistors by Al doping
Author
Oh, HKim, JJSong, WMoon, SKim, NKim, JPark, Noejung
Keywords
SINGLE
Issue Date
2006-03
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.88, no.10, pp. -
Abstract
We report the effect of an Al layer, covering the central part of the nanotube channel, on the electrical transport properties of carbon nanotube field-effect transistors (CNFETs). The CNFETs, consisting of single-walled carbon nanotube or double-walled carbon nanotube between two Pd electrodes on top of Si O2 layer, which showed p -type or ambipolar transport behaviors, exhibit clear n -type characteristics after the Al deposition. We ascribe such conversions into n -type behaviors to the electron doping in the Al-covered nanotube region, which results in the bending of the nanotube bands nearby the edges of the Al layer. This technique, Al deposition under a high vacuum, may give rise to a practical fabrication method for the n -type CNFET, which may enable us to develop complementary logic nanotube electronic devices.
URI
Go to Link
DOI
10.1063/1.2183818
ISSN
0003-6951
Appears in Collections:
PHY_Journal Papers
Files in This Item:
2-s2.0-33644931630.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU