Fabrication of n-type carbon nanotube field-effect transistors by Al doping
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- Fabrication of n-type carbon nanotube field-effect transistors by Al doping
- Oh, H; Kim, JJ; Song, W; Moon, S; Kim, N; Kim, J; Park, Noejung
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.88, no.10, pp. -
- We report the effect of an Al layer, covering the central part of the nanotube channel, on the electrical transport properties of carbon nanotube field-effect transistors (CNFETs). The CNFETs, consisting of single-walled carbon nanotube or double-walled carbon nanotube between two Pd electrodes on top of Si O2 layer, which showed p -type or ambipolar transport behaviors, exhibit clear n -type characteristics after the Al deposition. We ascribe such conversions into n -type behaviors to the electron doping in the Al-covered nanotube region, which results in the bending of the nanotube bands nearby the edges of the Al layer. This technique, Al deposition under a high vacuum, may give rise to a practical fabrication method for the n -type CNFET, which may enable us to develop complementary logic nanotube electronic devices.
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