The authors report the construction of carbon nanotube Schottky diodes by covering a selectively exposed area of the electrode with self-assembling molecules. Two self-assembling molecules with different polarities, 2-aminoethanethiol and 3-mercaptopropionic acid, were used to modify the Fermi level lineup at the selected contact. The devices showed p -type behavior with symmetric I-V showing clear rectifying behavior after treatment of one contact with 2-aminoethanethiol. Their experiment, in conjunction with the results of ab initio electronic structure calculations, suggests that the diode action stems from the asymmetric Fermi level lineup between the bare and engineered contacts.