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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

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Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

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Title
Influence of metal work function on the position of the Dirac point of graphene field-effect transistors
Author
Park, NoejungKim, B.-K.Lee, J.-O.Kim, J.-J.
Keywords
Device layout; Dirac point; Fabrication procedure; Graphene devices; Metal contacts; Metal electrodes; Metal work function; Peak position; Transport measurements
Issue Date
2009-12
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.95, no.24, pp. -
Abstract
We studied the effect of metal contact on the position of the Dirac point by means of transport measurements. To determine the sole effect of metal contact, we prepared more than 100 graphene devices following the same fabrication procedure and with a device layout that differed only in the type of metal electrode used. By measuring the peak position of the resistance, the Dirac points (V(g)(Dirac)) were recorded in the gate response. The work function of metal-graphene complex was found to be a fair phenomenological indicator of the location of V(g)(Dirac) in the transfer response.
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DOI
10.1063/1.3274039
ISSN
0003-6951
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SNS_Journal Papers
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