Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 2400139 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.contributor.author | Song, Wonho | - |
dc.contributor.author | Lee, Jung-Yong | - |
dc.contributor.author | Kim, Junhyung | - |
dc.contributor.author | Park, Jinyoung | - |
dc.contributor.author | Jo, Jaehyeong | - |
dc.contributor.author | Hyun, Eunseok | - |
dc.contributor.author | Kim, Jiwan | - |
dc.contributor.author | Park, Hyunjae | - |
dc.contributor.author | Eom, Daejin | - |
dc.contributor.author | Choi, Gahyun | - |
dc.contributor.author | Park, Kibog | - |
dc.date.accessioned | 2024-09-13T11:05:08Z | - |
dc.date.available | 2024-09-13T11:05:08Z | - |
dc.date.created | 2024-09-12 | - |
dc.date.issued | 2024-09 | - |
dc.description.abstract | The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, it is demonstrated experimentally that the effective work-function of the Aluminum (Al) electrode in Al/SiO2/n-Si junction increases significantly by approximate to 1.04 eV with the graphene interlayer inserted at Al/SiO2 interface. The device-physical analysis of solving Poisson equation analytically is provided when the flat-band voltage is applied to the junction, supporting that the large tuning of Al effective work-function may originate from the electric dipole layer formed by the off-centric distribution of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer. | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, pp.2400139 | - |
dc.identifier.doi | 10.1002/aelm.202400139 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.scopusid | 2-s2.0-85202769267 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/83781 | - |
dc.identifier.wosid | 001304004800001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.title | Largely-Tuned Effective Work-Function of Al/Graphene/SiO2/Si Junction with Electric Dipole Layer at Al/Graphene Interface | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | flat-band voltage | - |
dc.subject.keywordAuthor | graphene interlayer | - |
dc.subject.keywordAuthor | MOS junction | - |
dc.subject.keywordAuthor | capacitance-voltage curve | - |
dc.subject.keywordAuthor | dipole layer | - |
dc.subject.keywordAuthor | effective work-function of gate electrode | - |
dc.subject.keywordAuthor | electric | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | ALD | - |
dc.subject.keywordPlus | GATE CMOS TECHNOLOGY | - |
dc.subject.keywordPlus | GRAPHENE | - |
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