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Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe2 via Tellurization

Author(s)
Choi, MinhyukOh, SaeyoungHahn, SungsooJi, YubinJo, Min-kyungKim, JeongtaeJu, Tae-SeongKim, GyeongboGyeon, MinseungLee, YuhwaDo, JeonghyeonChoi, SeungwookKim, AnsoonYang, SeungmoHwang, ChangyongKim, Kab-JinCho, DooheeKim, ChangyoungKang, KibumJeong, Hu YoungSong, Seungwoo
Issued Date
2024-06
DOI
10.1021/acsnano.4c02863
URI
https://scholarworks.unist.ac.kr/handle/201301/82978
Citation
ACS NANO, v.18, no.23, pp.15154 - 15166
Abstract
Platinum ditelluride (1T-PtTe2) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe2 is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to similar to 3.8 nm, which is consistent with that of single crystal PtTe2, was observed, proving its ultralow defect density.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
tellurizationhighly crystallinethin film2D topological semimetalplatinum ditelluridewafer-scale synthesis
Keyword
ELECTRICAL-RESISTIVITY MODELDIRAC SEMIMETALGROWTHTRANSITIONMETALREFLECTIONTHICKNESSEPITAXYPTSE2POLYCRYSTALLINE FILMS

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