Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by Ag Filament Formation

Abstract

Forming-free, low-voltage, and high-speed resistive switching is demonstrated in an Ag/oxygen-deficient vanadium oxide (VOx)/Pt device via the facilitated formation and rupture of Ag filaments. Direct current (DC) voltage sweep measurements exhibit forming-free switching from a high-resistance state (HRS) to a low-resistance state (LRS), called SET, at an average V-SET of +0.23 V. The reverse RESET transition occurs at an average V-RESET of -0.07 V with a low RESET current of <1 mA. Reversible switching operations are stable with an HRS/LRS resistance ratio >10(3) during repeated measurements for thousands of cycles. In pulse measurements, switching occurs within 100 ns at an amplitude of +1.5 V. Notably, a two-step resistance change is observed in the SET operation, where the resistance first partially decreases due to Ag+ ion accumulation in VOx and then further decreases to the LRS after hundreds of nanoseconds upon complete filament formation. The VOx layer deposited to be mostly amorphous with oxygen deficiency from V2O5 has abundant vacancies and expedites Ag+ ion migration, thus realizing forming-free, high-speed, and low-voltage switching. These characteristics of the facilitated Ag filament formation using the substoichiometric VOx layer are highly beneficial for use as stand-alone nonvolatile memory and in-memory computing elements.