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Huh, Jae-Hoon
Opto-Electronics Convergence Group & Low Dimensional Carbon Materials Center
Research Interests
  • Graphene
  • Engineering
  • Materials Engineering
  • Materials Physics
  • Nanomaterials

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Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

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Title
Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
Author
Huh, Jae-HoonHermannstadter, ClausAkahane, KouichiJahan, Nahid A.Sasaki, MasahideSuemune, Ikuo
Keywords
BEAM EPITAXY; INP; LASERS; PLASMA; INALAS
Issue Date
2012-06
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.06FF12-1 - 06FF12-5
Abstract
We use high-density InAs quantum dots, which were grown by molecular beam epitaxy on InP(311)B substrates, as photon sources in the telecommunication C band at approximately 1.55 mu m. To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. The benefit of using high-density quantum dot samples is that at least one optically active quantum dot can be expected in every single mesa. We show that the etching rate and resulting mesa shape of the In0.53Al0.22Ga0.25As epitaxial layer can be varied with the chamber pressure during the etching process. Furthermore, under constant pressure and with increasing etching time, the sequential etching of the epitaxial layer and the underneath substrate leads to a significant modification in the mesa shape, too. We demonstrate that the isolation of a small number of quantum dots within one mesa results in the appearance of single quantum dot emission with a narrow line width and minimal spectral overlap between different emission lines. We moreover present significant enhancement of the luminescence collected from single dots in silver-embedded nanomesas when compared with as-etched mesas.
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DOI
10.1143/JJAP.51.06FF12
ISSN
0021-4922
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