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Han, Ki Jin
Electromagnetic System Design Lab
Research Interests
  • Electromagnetics, electromechanics, electromagnetic compatibility (EMC)

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Electromagnetic Modeling of Through-Silicon Via (TSV) Interconnections Using Cylindrical Modal Basis Functions

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Title
Electromagnetic Modeling of Through-Silicon Via (TSV) Interconnections Using Cylindrical Modal Basis Functions
Author
Han, Ki JinSwaminathan, MadhavanBandyopadhyay, Tapobrata
Keywords
$RLGC; extraction; Cylindrical modal basis function; excess capacitance; integral equation; interconnection modeling; three-dimensional (3-D) integration; through-silicon via (TSV)
Issue Date
2010-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ADVANCED PACKAGING, v.33, no.4, pp.804 - 817
Abstract
This paper proposes an efficient method to model through-silicon via (TSV) interconnections, an essential building block for the realization of silicon-based 3-D systems. The proposed method results in equivalent network parameters that include the combined effect of conductor, insulator, and silicon substrate. Although the modeling method is based on solving Maxwell's equation in integral form, the method uses a small number of global modal basis functions and can be much faster than discretization-based integral-equation methods. Through comparison with 3-D full-wave simulations, this paper validates the accuracy and the efficiency of the proposed modeling method.
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DOI
10.1109/TADVP.2010.2050769
ISSN
1521-3323
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EE_Journal Papers
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