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Lee, Ki-Suk
Creative Lab. for Advanced Spin Systems (CLASS)
Research Interests
  • Magnetism, spintronics, spin dynamics, rare-earth free magnet

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Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

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Title
Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy
Author
Enta, YoshiharuMun, Bongjin S.Rossi, MassimilianoRoss, Philip N., Jr.Hussain, ZahidFadley, Charles S.Lee, Ki-SukKim, Sang-Koog
Keywords
2P CORE-LEVEL; THERMAL-OXIDATION; SYNCHROTRON-RADIATION; SILICON; SI; GROWTH; OXIDE
Issue Date
2008-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.92, no.1, pp.1 - 3
Abstract
We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 °C, and examining the oxide thickness range from 0 to ∼25 A. The oxidation rate is initially very high (with rates of up to ∼225 Ah) and then, after a certain initial thickness of the oxide in the range of 6-22 A is formed, decreases to a slow state (with rates of ∼1.5-4.0 Ah). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation.
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DOI
10.1063/1.2830332
ISSN
0003-6951
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MSE_Journal Papers
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