Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy
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- Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy
- Enta, Yoshiharu; Mun, Bongjin S.; Rossi, Massimiliano; Ross, Philip N., Jr.; Hussain, Zahid; Fadley, Charles S.; Lee, Ki-Suk; Kim, Sang-Koog
- 2P CORE-LEVEL; THERMAL-OXIDATION; SYNCHROTRON-RADIATION; SILICON; SI; GROWTH; OXIDE
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.92, no.1, pp.1 - 3
- We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 °C, and examining the oxide thickness range from 0 to ∼25 A. The oxidation rate is initially very high (with rates of up to ∼225 Ah) and then, after a certain initial thickness of the oxide in the range of 6-22 A is formed, decreases to a slow state (with rates of ∼1.5-4.0 Ah). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation.
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