Self-Selective Ferroelectric Random Access Memory Based on Graphene Field Effect Transistor

Abstract

We experimentally demonstrate a new concept of non-destructive read-out process for ferroelectric memory device based on graphene field effect transistor (FeGFET) which requires no selector for random accessing. In the proposed read-out process, the transconductance of graphene channel is measured to sense the spontaneous polarization (SP) of ferroelectric layer designated to be its memory state. We found that the sign of transconductance is reversed as the SP direction switches due to the ambipolar characteristic of graphene as shown in Fig. 1 [1]. The transconductance was also found to maintain its sign persistently, implying the reliable retention of memory state (Fig. 2). The configuration of transconductance measurement will be established only for the crossing cell in the cross-point type of memory cell array without influencing other cells. This peculiarity of proposed read-out method can lead to the fabrication of high speed, ultra-low power, and high density 3D stackable non-volatile memory. [2]