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Yoo, Jung-Woo
Functional Hybrid Materials and Devices Lab(FHMDL)
Research Interests
  • Transport properties, spintronics, organic/molucular magnet, electronic, and spintronics,
  • 2DEG, energy harvesting device, atomic/molecular layer deposition

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Tunneling vs. giant magnetoresistance in organic spin valve

Cited 18 times inthomson ciCited 17 times inthomson ci
Title
Tunneling vs. giant magnetoresistance in organic spin valve
Author
Yoo, Jung-WooJang, H. W.Prigodin, V. N.Kao, C.Eom, C. B.Epstein, A. J.
Keywords
Giant magnetoresistance; Organic spin valve; Spin injection; Thermionic field emission; Tunneling magnetoresistance
Issue Date
2010-02
Publisher
ELSEVIER SCIENCE SA
Citation
SYNTHETIC METALS, v.160, no.3-4, pp.216 - 222
Abstract
We studied magnetoresistance (MR) in La2/3Sr1/3MnO3 (LSMO)/organic semiconductor (OSC)/Fe heterojunction devices using rubrene (C42H28) as an organic semiconductor. Efficient spin polarized tunneling using a hybrid barrier (oxide (1.2 nm)/rubrene (5 nm)) was observed. Devices with a thin layer of rubrene as the barrier may have magnetic clusters and/or pinholes in the barrier, which could explain significant variations of MR among devices. As the thickness of the rubrene layer is increased, device current becomes strongly limited by carrier injection resulting in strong temperature and bias dependent device resistance. The carrier injection in these devices can be described with thermionic field emission at the metal/OSC interface and is analyzed with both empirical and theoretical models. The effect of carrier transport through the spacer on the magnetoresistance for organic-based spin valve is discussed. The observed giant magnetoresistance (GMR) in 20 nm rubrene device demonstrates the spin polarized carrier injection and transport through the rubrene OSC layer.
URI
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DOI
10.1016/j.synthmet.2009.11.019
ISSN
0379-6779
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