dc.citation.endPage |
1110 |
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dc.citation.number |
8 |
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dc.citation.startPage |
1108 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
74 |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T12:13:07Z |
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dc.date.available |
2023-12-22T12:13:07Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
1999 |
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dc.description.abstract |
The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.74, no.8, pp.1108 - 1110 |
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dc.identifier.doi |
10.1063/1.123458 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-0001455870 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7713 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001455870 |
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dc.identifier.wosid |
000078685700018 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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