dc.citation.endPage |
1582 |
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dc.citation.number |
11 |
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dc.citation.startPage |
1580 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
75 |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Lee, JL |
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dc.contributor.author |
Yoo, HM |
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dc.date.accessioned |
2023-12-22T12:10:23Z |
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dc.date.available |
2023-12-22T12:10:23Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
1999-09 |
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dc.description.abstract |
The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS). Transconductance was decreased by 10% in the frequency range of 10 Hz-10 kHz at the negative gate bias, but it was increased at the positive one. In the DLTS spectra, two hole trap-like signals corresponding to surface states were only observed at the negative pulse bias, whereas the DX-center with the activation energy of 0.42 +/- 0.01 eV were observed at the positive one. The activation energy agrees well with that obtained from the temperature dependence of the positive transconductance dispersion, 0.39 +/- 0.03 eV. These provide evidence that the positive and negative transconductance dispersions are due to the DX center and surface states, respectively. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.75, no.11, pp.1580 - 1582 |
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dc.identifier.doi |
10.1063/1.124760 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-0032620343 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7711 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0032620343 |
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dc.identifier.wosid |
000082441000031 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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