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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 258 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 253 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 43 | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Han, SY | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Moon, JK | - |
dc.contributor.author | Park, M | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2023-12-22T11:10:20Z | - |
dc.date.available | 2023-12-22T11:10:20Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2003-08 | - |
dc.description.abstract | The optimal Ohmic contact to an AlxGa1-xAs/lnGaAs pseudomorphic high-electron-mobility-transistor (PHEMT) structure with a high A1 mote fraction (x = 0.75) was developed from comparative studies of Au/Ge/Ni/Au and Pd/Ge/Ti/Au contacts for various etching depths of the cap layer and annealing temperatures. A minimum Ohmic contact resistivity (rho(c)) of 2.0 x 10(-6) Ohm-cm(2) was obtained by annealing (T = 450 degreesC) Au/Ge/Ni/Au metals deposited on undoped PHEMT substrate. The rho(c) of Au/Ge/Ni/Au increased with the etching depth, but that of Pd/Ge/Ti/Au showed the opposite trend. This was due to deeper penetration of the Au/Ge/Ni/Au contact compared with the Pd/Ge/Ti/Au contact. The penetrating Art reacted with the PHEMT substrate to form Au2Al and Au2Ga, which generated group-III vacancies acting as donors. The device fabricated using the optimal Ohmic contact showed a low knee voltage and a negligible gate leakage current at high gate bias, which are due to the good Ohmic contact and the large conduction band offset between AlGaAs and InGaAs. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.2, pp.253 - 258 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-0042416658 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7689 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0042416658 | - |
dc.identifier.wosid | 000184810800014 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistor | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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