Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC

Abstract

The degradation mechanism of Ta Schottky contact on 4H-SiC exposed to an inductively coupled plasma (ICP) was studied using deep-level transient spectroscopy and angle-resolved x-ray photoelectron spectroscopy (XPS). Four kinds of traps T1, T2, T3, and T4 were observed in the ICP-etched sample. The T4 trap was deep in the bulk, but the shallower levels, T1, T2 and T3, were localized near the contact. From angle-resolved XPS measurements, the ICP-etched surface was found to be carbon deficient, meaning the production of carbon vacancies by ICP etching. The activation energies 0.48 (T3 trap) and 0.60 eV (T4 trap) agreed well with the previously proposed energy level of V-C (0.5 eV). The ICP-induced traps provided a path for the transport of electrons at the interface of metal with Sic, leading to a reduction of the Schottky barrier height and an increase of the gate leakage current.