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DC Field | Value | Language |
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dc.citation.endPage | 1009 | - |
dc.citation.number | 5698 | - |
dc.citation.startPage | 1005 | - |
dc.citation.title | SCIENCE | - |
dc.citation.volume | 306 | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Biegalski, M | - |
dc.contributor.author | Li, YL | - |
dc.contributor.author | Sharan, A | - |
dc.contributor.author | Schubert, J | - |
dc.contributor.author | Uecker, R | - |
dc.contributor.author | Reiche, P | - |
dc.contributor.author | Chen, YB | - |
dc.contributor.author | Pan, XQ | - |
dc.contributor.author | Gopalan, V | - |
dc.contributor.author | Chen, LQ | - |
dc.contributor.author | Schlom, DG | - |
dc.contributor.author | Eom, CB | - |
dc.date.accessioned | 2023-12-22T10:41:25Z | - |
dc.date.available | 2023-12-22T10:41:25Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2004-11 | - |
dc.description.abstract | Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500degreesC higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices. | - |
dc.identifier.bibliographicCitation | SCIENCE, v.306, no.5698, pp.1005 - 1009 | - |
dc.identifier.doi | 10.1126/science.1103218 | - |
dc.identifier.issn | 0036-8075 | - |
dc.identifier.scopusid | 2-s2.0-8344268623 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7678 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=8344268623 | - |
dc.identifier.wosid | 000225001100035 | - |
dc.language | 영어 | - |
dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
dc.title | Enhancement of ferroelectricity in strained BaTiO3 thin films | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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