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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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dc.citation.endPage 1009 -
dc.citation.number 5698 -
dc.citation.startPage 1005 -
dc.citation.title SCIENCE -
dc.citation.volume 306 -
dc.contributor.author Choi, Kyoung Jin -
dc.contributor.author Biegalski, M -
dc.contributor.author Li, YL -
dc.contributor.author Sharan, A -
dc.contributor.author Schubert, J -
dc.contributor.author Uecker, R -
dc.contributor.author Reiche, P -
dc.contributor.author Chen, YB -
dc.contributor.author Pan, XQ -
dc.contributor.author Gopalan, V -
dc.contributor.author Chen, LQ -
dc.contributor.author Schlom, DG -
dc.contributor.author Eom, CB -
dc.date.accessioned 2023-12-22T10:41:25Z -
dc.date.available 2023-12-22T10:41:25Z -
dc.date.created 2014-10-22 -
dc.date.issued 2004-11 -
dc.description.abstract Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500degreesC higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices. -
dc.identifier.bibliographicCitation SCIENCE, v.306, no.5698, pp.1005 - 1009 -
dc.identifier.doi 10.1126/science.1103218 -
dc.identifier.issn 0036-8075 -
dc.identifier.scopusid 2-s2.0-8344268623 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7678 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=8344268623 -
dc.identifier.wosid 000225001100035 -
dc.language 영어 -
dc.publisher AMER ASSOC ADVANCEMENT SCIENCE -
dc.title Enhancement of ferroelectricity in strained BaTiO3 thin films -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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