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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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dc.citation.endPage 498 -
dc.citation.number 2 -
dc.citation.startPage 495 -
dc.citation.title JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B -
dc.citation.volume 23 -
dc.contributor.author Kim, IG -
dc.contributor.author Choi, Kyoung Jin -
dc.contributor.author Lee, JL -
dc.date.accessioned 2023-12-22T10:37:50Z -
dc.date.available 2023-12-22T10:37:50Z -
dc.date.created 2014-10-22 -
dc.date.issued 2005-03 -
dc.description.abstract Effects of inductively coupled plasma (ICP) treatment on Fermi level pinning on the surface of Si0.83 Ge0.17 was studied by current-voltage and x-ray photoemission spectroscopy measurements. ICP treatment induced the growth of silicon oxide, suggesting that Si vacancies are generated under the oxide. From linear fitting of Schottky barrier heights with metal work functions, it was found that surface state density increased from 6.60× 1012 to 1.13× 1013 cm2 eV by the ICP treatment, leading to the pinning of surface Fermi level about EC ∼0.53 eV. From this, it is suggested that the Si vacancies are the main surface states in pinning Fermi level on the ICP-treated surface. -
dc.identifier.bibliographicCitation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.23, no.2, pp.495 - 498 -
dc.identifier.doi 10.1116/1.1868652 -
dc.identifier.issn 1071-1023 -
dc.identifier.scopusid 2-s2.0-31144444730 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7671 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=31144444730 -
dc.identifier.wosid 000228788600025 -
dc.language 영어 -
dc.publisher A V S AMER INST PHYSICS -
dc.title Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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