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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4661 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 4658 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Park, Jae-Hwan | - |
dc.contributor.author | Kang, Gyo-Sung | - |
dc.contributor.author | Kwon, Soon-Ii | - |
dc.contributor.author | Lim, Dong-Gun | - |
dc.contributor.author | Choi, Young-Jin | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Park, Jae-Gwan | - |
dc.date.accessioned | 2023-12-22T08:37:03Z | - |
dc.date.available | 2023-12-22T08:37:03Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2008-09 | - |
dc.description.abstract | ZnO nanosheets were fabricated by an oxygen-assisted carbothermal reduction process and their properties were evaluated. In particular, the FET characteristics and photoluminescence properties of ZnO nanosheets were evaluated. The conduction type of ZnO nanosheets was determined as an n-type and the mobility was 20-40 cm 2/V-s, which is fairly high compared to ZnO nanowires. This might be attributed to the wide conduction area of ZnO nanosheet compared to nanowire structures and their better crystallinity. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4658 - 4661 | - |
dc.identifier.doi | 10.1166/jnn.2008.IC07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-55849127446 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7623 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=55849127446 | - |
dc.identifier.wosid | 000260776900062 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Structural, Optical, and Electrical Properties of Semiconducting ZnO Nanosheets | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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